Datasheet NIKOS P1003EK P-Channel
Datasheet NIKOS P1003EK P-Channel.
Note : Toshiba C800
- Type : P1003EK
- Type of Transistor: MOSFET
- Type of Control Channel: P -Channel
- Maximum Power Dissipation (Pd): 62.5 W
- Maximum Drain-Source Voltage |Vds|: 30 V
- Maximum Gate-Source Voltage |Vgs|: 25 V
- Maximum Drain Current |Id|: 30 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 44 nS
- Drain-Source Capacitance (Cd): 566 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0105 Ohm
- Package: PDFN5X6P
Note : Toshiba C800
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